2023
1. Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer
Jeong Yong Yang†, Minseong Park†, Min Jae Yeom†, Yongmin Baek, Seok Chan Yoon, Yeong Je Jeong, Sanghee Kim, Seung Yoon Oh, Kyusang Lee*, and Geonwook Yoo*
ACS Nano (link) †These authors contributed equally to this work. *Co-corresponding authors.
2. An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP2S6/GaN HEMT
Minseong Park†, Jeong Yong Yang†, Min Jae Yeom, Yongmin Baek, Byungjoon Bae, Geonwook Yoo*, and Kyusang Lee*
Science Advances (link) †These authors contributed equally to this work. *Co-corresponding authors.
3. Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric
Jeong Yong Yang, Seung Yoon Oh, Min Jae Yeom, Seokgi Kim, Gyuhyung Lee, Kyusang Lee, Sungkyu Kim, and Geonwook Yoo
IEEE Electron Device Letters (link)
2022
1. Reconfigurable Radio-Frequency High-Electron Mobility Transistors via Ferroelectric-Based Gallium Nitride Heterostructure
Jeong Yong Yang, Min Jae Yeom, Jaeyong Lee, Kyusang Lee, Changkun Park*, Junseok Heo*, and Geonwook Yoo*
Advanced Electronic Materials (link) *Co-corresponding author
