2.5D/3D GaN-Si CMOS integration by Cu-Cu bonding

2.5D/3D GaN/CMOS integration through Cu-Cu bonding is an ultra-fine pitch (<10um) packaging technology that preserves the characteristics of GaN and Si devices without degradation, while fully utilizing the existing silicon foundry infrastructure.

Our goal is to achieve 2.5D/3D heterogeneous integration, facilitating high-frequency and high-power operation via a back-side power delivery network from GaN HEMT to Si CMOS.