Hetero-integrated time-of-flight sensors

We demonstrated time-of-flight (ToF) sensors based on hetero-integration of fabricated GaN-based high electron mobility transistors (HEMTs) and GaAs-based vertical-cavity surface-emitting lasers (VCSELs) on a single platform via a cold-welding method.

Based on the performance of the individual device, this novel ToF sensors suggest a new pathway towards enabling high-power, fast switching, solid-state and high-resolution 3D imaging, as well as inspiring a broader range of electronic and optoelectronic applications.