Resistive time-of-flight 3D sensing

3D depth information has been successfully achieved by a neuron-like behavior of memristive intelligent matter. The HfO2 memristors exhibit in-memory depth sensing capability that can replace the conventional complex memory and time-to-digital converter (TDC) logics. By employing the proposed resistive time-of-flight principle, we demonstrate the 3D imaging capability as well as crossbar-based image reconstruction and classification. 

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